Application of Ion Beam Enhanced Deposition to Metallization of CVD Diamond Films

1998 ◽  
Vol 169 (1) ◽  
pp. R5-R6 ◽  
Author(s):  
N. B. Wong ◽  
G. Q. Li ◽  
S. M. Zhu ◽  
S. C. Tjong ◽  
S. T. Lee
Keyword(s):  
Ion Beam ◽  
Author(s):  
Akihisa Yoshida ◽  
Masahiro Deguchi ◽  
Makoto Kitabatake ◽  
Takashi Hirao ◽  
Jiro Matsuo ◽  
...  

1998 ◽  
Vol 120 (2) ◽  
pp. 379-384 ◽  
Author(s):  
Kazuhisa Miyoshi

Regardless of environment (ultrahigh vacuum, humid air, dry nitrogen, or water), ion-beam-deposited diamondlike carbon (DLC) and nitrogen-ion-implanted, chemical-vapor-deposited (CVD) diamond films had low steady-state coefficients of friction (<0.1) and low wear rates (≤ 10−6 mm3/N·m). These films can be used as effective wear-resistant, self-lubricating coatings regardless of environment. On the other hand, as-deposited, fine-grain CVD diamond films; polished, coarse-grain CVD diamond films; and polished and then fluorinated, coarse-grain CVD diamond films can be used as effective wear-resistant, self-lubricating coatings in humid air, in dry nitrogen, and in water, but they had a high coefficient of friction and a high wear rate in ultrahigh vacuum. The polished, coarse-grain CVD diamond film revealed an extremely low wear rate, far less than 10−10 mm3/N·m, in water.


2002 ◽  
Vol 750 ◽  
Author(s):  
Patrick W. Leech ◽  
Geoffrey K. Reeves ◽  
Anthony S. Holland ◽  
Mark C. Ridgway

ABSTRACTDiamond films were implanted with Au or O ions at multiple energies in order to produce a uniform region of C vacancies. Analysis of the implanted films by Raman spectroscopy has shown that the proportion of non-diamond or amorphous carbon increased with dose (5 × 1013 − 5 × 1015 ions/cm2). For implantation with Au ions, a complete amorphisation near to the surface was evident at a dose of 5 × 1015 ions/cm2. We have examined the ion beam etch (IBE) rate of the films as a function of the implant species and dose. The etching experiments were performed using either Ar or Ar/O2 gases at a bias energy of 500 -1,000 eV. In Ar gas, the process of sputter etching has produced a similar increase in etch rate with dose for both the Au and O implants. In Ar/ O2 gases, the process of ion-enhanced chemical etching produced greater etch rates than obtained in Ar gas with higher rates for the Au than the O implants.


2000 ◽  
Vol 62 (3) ◽  
pp. 241-246 ◽  
Author(s):  
S.C Tjong ◽  
N.B Wong ◽  
G Li ◽  
S.T Lee

Author(s):  
Akihisa Yoshida ◽  
Masahiro Deguchi ◽  
Makoto Kitabatake ◽  
Takashi Hirao ◽  
Jiro Matsuo ◽  
...  

2005 ◽  
Vol 202 (11) ◽  
pp. 2171-2176 ◽  
Author(s):  
A. Hikavyy ◽  
P. Clauws ◽  
W. Deferme ◽  
G. Bogdan ◽  
K. Haenen ◽  
...  
Keyword(s):  

Author(s):  
M. Park ◽  
D. R. McGregor ◽  
L. Bergman ◽  
R. J. Nemanich ◽  
J. J. Hren ◽  
...  

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